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Press Release

SMI Demonstrates Si Doped Ga2O3 on Sapphire (Al2O3) Substrates

Piscataway, NJ - January 15, 2018 - Structured Materials Industries, Inc. (“SMI”) is pleased to announce that its R&D team has successfully grown Si Doped Gallium Oxide (Ga2O3) films on Sapphire (Al2O3) substrates using the MOCVD technique. The demonstration has proven that doped Ga2O3 films can be deposited uniformly on large-area substrates for device applications. SMI was able to draw upon past experience to successfully

Ga2O3 on wafers, gallium oxide on wafers, gallium oxide, Ga2O3
Images illustrate before and after growth of Ga2O3 film on wafers.

demonstrate this growth. Previously, SMI grew Si doped Ga2O3films on insulating (or unintentionally doped) bulk Ga2O3 substrates, that were acquired from different organizations around the world, including IKZ in Germany, Tamura in Japan, and from Synoptics in California.

 “We chose Gallium Oxide (Ga2O3) as a wide bandgap semiconductor material because of its impressive properties; which, for certain applications, are widely regarded as superior to silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) semiconductor materials.”, said Dr. Serdal Okur, Principal Investigator of SMI DOE and NASA Ga2O3 projects, commenting further “There is a significant amount of commercial opportunity for Ga2O3 on Al2O3. One example is a low cost power control device based on a superior wide bandgap semiconductor material, which could add benefits of higher voltage, higher power handling, and higher frequency capabilities. In addition, tuning the energy bandgap of Ga2O3 with Al2O3 and In2GO3 enables a broad range of applications such as photodetectors tune-able through UV wavelengths, optical filters with tunable transmission range, and graded heterostructures for optoelectronic devices, as well as MOSFET.”

Gallium Oxide, Sapphire substrate, ga2O3 on al2o3, XRD, XRD Ga2O3, XRD Ga2O3 on Al2O3
Image shows XRD results of Ga2O3film on sapphire grown at 600 °C.

Structured Materials Industries, Inc. President and CEO, Dr. Gary S. Tompa, stated, "We are very proud to offer high quality customized solutions for new material efforts that enable researchers to meet their developmental objectives. This offering comes as an extension from our traditional line of products and the commercialization of technologies funded by the government while collaborating with notable universities and companies in the United States. This milestone achievement executed by our research team attests to our company's strategic objectives and core competencies.

The materials were grown using in-house SMI fabricated MOCVD tools. The Ga2O3 were grown in one of SMI's two Ga2O3 MOCVD reactors, one of which features a rotating disc reactor with a 13-inch diameter susceptor. The other features single 2" wafers processing through 1200°C.

 8" Si Wafers, Ga2O3,  8" Si Wafers with Ga2O3,  Ga2O3 for sale
Image shows an 8" Si Wafers with Ga2O3 deposited on it. Similar items will be sold on our website in smaller wafer sizes.
optical micrograph, optical micrograph of Ga2O3 on Al2O3, optical micrograph of Gallium Oxide on Sapphire, optical micrograph of Gallium Oxide, Gallium Oxide, Ga2O3
Image shows optical micrograph of interdigitated contact pattern on Ga2O3 epilayer grown on Al2O3

About Structured Materials Industries, Inc.

Structured Materials Industries, Inc (SMI) is a leader in developing and implementing tailored solution custom research and production Chemical Vapor Deposition (CVD), Metal Organic Chemical Vapor Deposition (MOCVD) Tool and Process Technology and process enhanced tools such as Plasma Enhanced CVD (PECVD), Alternating Layer Deposition (ALD), High Pressure CVD (HPCVD), Hydride Vapor Phase Epitaxy (HVPE) and other related techniques for the widest range of materials in the industry.

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