Introducing the GaNomite™
Structured Materials Industries, Inc. (SMI) has released a new series of SpinCVD™ reactors and systems for GaN film deposition -- the GaNomite™. These systems are geared to economically address manufacturer and researcher needs alike. GaNomite™ systems represent an advancement in state-of-the-art nitride MOCVD reactors. The GaNomite™ implements the benefits of SpinCVD™ high speed rotation to streamline gas flows, marries the benefits of multi-zone substrate heating with relatively close spacing of the showerhead to the deposition plane combined with direct control of radial distribution of reactants to minimize pre-reactions while maximizing uniformity of thickness and composition.
For complete GaNomite™ story, click here.
Nitrides
MATERIALS
Oxides
TCOs
ZnO
YBCO, Superconductors
Ga2O3
LaAlO
BST
PZT
CMO
Al2O3
Ti2O3
Ta2O5
LiNbO3
Many others
Nanowires
Si, SiGe, SiGeC, SiGeSn, SiGeSnC, etc. for batteries
Si, SiGe, SiGeC, SiGeSn, SiGeSnC, etc. for thermoelectrics
CNTs
ZnO
GaN
Many others
Chalcogenides
MoS2, WSe2, etc.
GeS, CuS, GeSiTe, etc.
III-Vs (arsenides, phosphide, antimonides, etc.)
II-VIs (
Nitrides (GaN, AlN, InN, BN)
Carbides (SiC, Metal carbides)
Diamond
Silicon / Silicides (Si, SiGe, SiGeSn)
Other
