Introducing the GaNomite™
Structured Materials Industries, Inc. (SMI) has released a new series of SpinCVD™ reactors and systems for GaN film deposition -- the GaNomite™. These systems are geared to economically address manufacturer and researcher needs alike. GaNomite™ systems represent an advancement in state-of-the-art nitride MOCVD reactors. The GaNomite™ implements the benefits of SpinCVD™ high speed rotation to streamline gas flows, marries the benefits of multi-zone substrate heating with relatively close spacing of the showerhead to the deposition plane combined with direct control of radial distribution of reactants to minimize pre-reactions while maximizing uniformity of thickness and composition.
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Nitrides
Oxides
Si, SiGe, SiGeC, SiGeSn, SiGeSnC, etc. for batteries
Si, SiGe, SiGeC, SiGeSn, SiGeSnC, etc. for thermoelectrics
III-Vs (arsenides, phosphide, antimonides, etc.)
II-VIs (
Carbides (SiC, Metal carbides)