Gas Flow Hollow Cathode (GFHC0) Sputter Deposition has been shown to be ideal methodology for depositing a wide range of materials that benefit from high deposition rates, low deposition energy, use of reactive gases and low substrate temperature. The low deposition energy and substrate temperature reduce coating defects as compared to conventional sputtering and allow deposition on plastics. Reactive gases can be injected downstream of the sputtering and inert gas is followed through the sputter source cathode protects the cathode from the reactive gases sputter some and allows reactive deposition of metal compounds; like oxides, nitrides, selenides, and tellurides, with deposition rates competitive with the deposition rates of bare metals. The GFHC is also applicable to pure metal depositions.

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